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EPC Releases 11th Reliability Report of GaN Devices Testing
Gallium Nitride (GaN) power devices have been widely used in various applications. However, there are some engineers who are concerned about their reliability, such as dynamic RDS(on), and safe operating area (SOA). Out of this concern, EPC has released its Phase 11 Reliability Report, testing GaN devices to failure to demonstrate robustness unmatched by silicon power mosfet, and also documenting the strategy used to achieve a remarkable field reliability record.
EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites.
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